The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 24, 2018
Filed:
Apr. 13, 2015
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Hsin-Yu Chen, Taipei, TW;
Ku-Feng Yang, Baoshan Township, TW;
Tasi-Jung Wu, Hsin-Chu, TW;
Lin-Chih Huang, Hsin-Chu, TW;
Yuan-Hung Liu, Hsin-Chu, TW;
Tsang-Jiuh Wu, Hsin-Chu, TW;
Wen-Chih Chiou, Zhunan Township, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
An apparatus comprises an interlayer dielectric layer formed on a first side of a substrate, a first photo-sensitive dielectric layer formed over the interlayer dielectric layer, wherein the first photo-sensitive dielectric layer comprises a first metal structure and a second photo-sensitive dielectric layer formed over the first photo-sensitive dielectric, wherein the second photo-sensitive dielectric layer comprises a second metal structure having a bottom surface coplanar with a top surface of the first metal structure.