The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 24, 2018
Filed:
Nov. 04, 2015
Tokyo Electron Limited, Tokyo, JP;
Akitoshi Harada, Miyagi, JP;
Yen-Ting Lin, Hsin-chu-shi, TW;
Chih-Hsuan Chen, Hsin-chu-shi, TW;
Ju-Chia Hsieh, Hsin-chu-shi, TW;
Shigeru Yoneda, Hsin-chu-shi, TW;
TOKYO ELECTRON LIMITED, Tokyo, JP;
Abstract
A plasma processing method performs an etching process of supplying a fluorine-containing gas into a plasma processing space and etching a target substrate, in which a silicon oxide film or a silicon nitride film is formed on a surface of a metal silicide film, with plasma of the fluorine-containing gas (process S). Then, the plasma processing method performs a reduction process of supplying a hydrogen-containing gas into the plasma processing space and reducing, with plasma of the hydrogen-containing gas, a metal-containing material deposited on a member, of which a surface is arranged to face the plasma processing space, after the etching process (process S). Thereafter, the plasma processing method performs a removal process of supplying an oxygen-containing gas into the plasma processing space and removing metal, which is obtained by reducing the metal-containing material in the reduction process, with plasma of the oxygen-containing gas (process S).