The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 13, 2018

Filed:

Jun. 17, 2015
Applicant:

American Air Liquide, Inc., Fremont, CA (US);

Inventors:

Peng Shen, Tsukuba, JP;

Christian Dussarrat, Tokyo, JP;

Curtis Anderson, Downingtown, PA (US);

Rahul Gupta, St. Louis, MO (US);

Vincent M. Omarjee, Grenoble, FR;

Nathan Stafford, Damascus, OR (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3065 (2006.01); C09K 13/00 (2006.01);
U.S. Cl.
CPC ...
H01L 21/30655 (2013.01); C09K 13/00 (2013.01);
Abstract

Replacement chemistries for the cCFpassivation gas in the Bosch etch process and processes for using the same are disclosed. These chemistries have the formula CHF, with 1 ≦x<7, 1≦y≦13, and 1≦z≦13. The replacement chemistries may reduce RIE lag associated with deep silicon aperture etching.


Find Patent Forward Citations

Shen, Peng. (2018). Chemistries for tsv/mems/power device etching (U.S. Patent No. 9892932). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9892932

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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