The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 06, 2018
Filed:
Feb. 10, 2016
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Chia-Chun Chung, Taoyuan County, TW;
Norman Chen, Hsinchu, TW;
Chih-Tsung Shih, Hsinchu, TW;
Jeng-Horng Chen, Hsinchu, TW;
Shinn-Sheng Yu, Hsinchu, TW;
Anthony Yen, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A pattern of features of an integrated circuit is provided. A configuration of a pupil of an extreme ultraviolet wavelength radiation beam (also referred to as an illumination mode), is selected. The selected configuration is an asymmetric, single pole configuration. At least one disparity is determined between a simulated imaging using the selected configuration and a designed imaging for the pattern of features. A parameter (also referred to as a compensation parameter) is then modified to address the at least one disparity, wherein the parameter at least one a design feature, a mask feature, and a lithography process parameter. A substrate is then exposed to the pattern of features using the selected configuration and the modified parameter.