The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 30, 2018
Filed:
Feb. 29, 2016
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Jyun-Ming Lin, Hsinchu, TW;
Hua Feng Chen, Hsinchu, TW;
Kuo-Hua Pan, Hsinchu, TW;
Min-Yann Hsieh, Hsinchu, TW;
C. H. Wu, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
A semiconductor device and method for fabricating such a device are presented. The semiconductor device includes a first gate electrode of a transistor, a first sidewall spacer along a sidewall of the gate pattern, a first insulating layer in contact with the first sidewall spacer and having a planarized top surface, and a second sidewall spacer formed on the planarized top surface of the first insulating layer. The second sidewall spacer may be formed over the first sidewall spacer. A width of the second sidewall spacer is equal to or greater than a width of the first sidewall spacer.