The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 28, 2017

Filed:

May. 24, 2012
Applicants:

Tomoko Sekiguchi, Tokyo, JP;

Takeyoshi Ohashi, Tokyo, JP;

Junichi Tanaka, Tokyo, JP;

Zhaohui Cheng, Tokyo, JP;

Ruriko Tsuneta, Tokyo, JP;

Hiroki Kawada, Tokyo, JP;

Seiko Hitomi, Tokyo, JP;

Inventors:

Tomoko Sekiguchi, Tokyo, JP;

Takeyoshi Ohashi, Tokyo, JP;

Junichi Tanaka, Tokyo, JP;

Zhaohui Cheng, Tokyo, JP;

Ruriko Tsuneta, Tokyo, JP;

Hiroki Kawada, Tokyo, JP;

Seiko Hitomi, Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01N 23/22 (2006.01); G06K 9/46 (2006.01); H01J 37/317 (2006.01); G01B 15/04 (2006.01); B82Y 10/00 (2011.01); B82Y 40/00 (2011.01); G06T 7/00 (2017.01); H01L 21/66 (2006.01);
U.S. Cl.
CPC ...
G06K 9/4604 (2013.01); B82Y 10/00 (2013.01); B82Y 40/00 (2013.01); G01B 15/04 (2013.01); G01N 23/22 (2013.01); G06T 7/0004 (2013.01); H01J 37/3174 (2013.01); H01J 2237/221 (2013.01); H01J 2237/226 (2013.01); H01J 2237/2816 (2013.01); H01J 2237/31754 (2013.01); H01J 2237/31796 (2013.01); H01L 22/12 (2013.01); H01L 2924/0002 (2013.01);
Abstract

In the present invention, at the time of measuring, using a CD-SEM, a length of a resist that shrinks when irradiated with an electron beam, in order to highly accurately estimate a shape and dimensions of the resist before shrink, a shrink database with respect to various patterns is previously prepared, said shrink database containing cross-sectional shape data obtained prior to electron beam irradiation, a cross-sectional shape data group and a CD-SEM image data group, which are obtained under various electron beam irradiation conditions, and models based on such data and data groups, and a CD-SEM image of a resist pattern to be measured is obtained (S), then, the CD-SEM image and data in the shrink database are compared with each other (S), and the shape and dimensions of the pattern before the shrink are estimated and outputted (S).


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