The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 21, 2017
Filed:
Sep. 14, 2015
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Chih-Tsung Shih, Hsinchu, TW;
Chieh-Jen Cheng, Hsinchu, TW;
Jeng-Horng Chen, Hsinchu, TW;
Chia-Chen Chen, Hsinchu, TW;
Shinn-Sheng Yu, Hsinchu, TW;
Anthony Yen, Hsinchu, TW;
Wei-Chih Lai, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsin-Chu, TW;
Abstract
Systems and methods for monitoring the focus of an EUV lithography system are disclosed. Another aspect includes a method having operations of measuring a first shift value for a first patterned set of sub-structures of a focus test structure on a wafer and measuring a second shift value for a second patterned set of sub-structures of the test structure on the wafer. The test structure may be formed on the wafer using asymmetric illumination, with the first patterned set of sub-structures having a first pitch and the second patterned set of sub-structures having a second pitch that is different from the first pitch. The method may further include determining a focus shift compensation for an illumination system based on a difference between the first shift value and the second shift value.