The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 14, 2017
Filed:
Jan. 07, 2016
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Hsiao-Ping Liu, Hsinchu, TW;
Hung-Chang Hsu, Kaohsiung, TW;
Hung-Wen Su, Zhubei, TW;
Ming-Hsing Tsai, Zhubei, TW;
Rueijer Lin, Hsinchu, TW;
Sheng-Hsuan Lin, Zhubei, TW;
Ya-Lien Lee, Baoshan Township, Hsinchu County, TW;
Yen-Shou Kao, Taichung, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A method for forming a semiconductor device structure is provided. The method includes forming a gate stack, a spacer layer, and a dielectric layer over a substrate. The method includes removing a first portion of the dielectric layer to form a first hole in the dielectric layer. A second portion of the dielectric layer is under the first hole. The method includes forming a first protection layer over the gate stack and the spacer layer. The method includes forming a second protection layer over the first protection layer. The second protection layer includes a metal compound material, and the first protection layer and the second protection layer includes a same metal element. The method includes removing the second portion of the dielectric layer to form a through hole. The method includes forming a conductive contact structure in the through hole.