The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 31, 2017
Filed:
Feb. 13, 2017
Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;
Cheng-Tung Lin, Hsinchu County, TW;
Teng-Chun Tsai, Hsinchu, TW;
Li-Ting Wang, Hsinchu, TW;
De-Fang Chen, Hsinchu, TW;
Bing-Hung Chen, New Taipei, TW;
Huang-Yi Huang, Hsinchu, TW;
Hui-Cheng Chang, Tainan, TW;
Huan-Just Lin, Hsinchu, TW;
Ming-Hsing Tsai, Hsinchu County, TW;
Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;
Abstract
According to an exemplary embodiment, a method of forming a semiconductor device is provided. The method includes: providing a vertical structure over a substrate; forming an etch stop layer over the vertical structure; forming an oxide layer over the etch stop layer; performing chemical mechanical polishing on the oxide layer and stopping on the etch stop layer; etching back the oxide layer and the etch stop layer to expose a sidewall of the vertical structure and to form an isolation layer; oxidizing the sidewall of the vertical structure and doping oxygen into the isolation layer by using a cluster oxygen doping treatment.