The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 24, 2017

Filed:

Feb. 23, 2016
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Weng-Jin Wu, Hsin-Chu, TW;

Ku-Feng Yang, Baoshan Township, TW;

Hung-Pin Chang, Taipei, TW;

Wen-Chih Chiou, Zhunan Township, TW;

Chen-Hua Yu, Hsin-Chu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/66 (2006.01); H01L 27/146 (2006.01); H01L 23/538 (2006.01); B24B 37/013 (2012.01); B24B 7/22 (2006.01); H01L 21/304 (2006.01); H01L 21/306 (2006.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H01L 23/48 (2006.01); H01L 25/00 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14634 (2013.01); B24B 7/228 (2013.01); B24B 37/013 (2013.01); H01L 21/304 (2013.01); H01L 21/30625 (2013.01); H01L 21/76898 (2013.01); H01L 22/26 (2013.01); H01L 22/30 (2013.01); H01L 23/481 (2013.01); H01L 23/528 (2013.01); H01L 23/5226 (2013.01); H01L 23/5384 (2013.01); H01L 25/50 (2013.01); H01L 27/1464 (2013.01); H01L 27/14636 (2013.01); H01L 21/76805 (2013.01); H01L 22/12 (2013.01); H01L 22/14 (2013.01); H01L 22/34 (2013.01); H01L 2924/0002 (2013.01);
Abstract

A wafer thinning system and method are disclosed that includes grinding away substrate material from a backside of a semiconductor device. A current change is detected in a grinding device responsive to exposure of a first set of device structures through the substrate material, where the grinding is stopped in response to the detected current change. Polishing repairs the surface and continues to remove an additional amount of the substrate material. Exposure of one or more additional sets of device structures through the substrate material is monitored to determine the additional amount of substrate material to remove, where the additional sets of device structures are located in the semiconductor device at a known depth different than the first set.


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