The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 10, 2017
Filed:
May. 18, 2016
International Business Machines Corporation, Armonk, NY (US);
Kangguo Cheng, Schenectady, NY (US);
Ryan O. Jung, Rensselaer, NY (US);
Fee Li Lie, Albany, NY (US);
Eric R. Miller, Albany, NY (US);
John R. Sporre, Albany, NY (US);
Sean Teehan, Rensselaer, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A silicon fin precursor is formed in an nFET device region and a fin stack comprising alternating material portions, and from bottom to top, of silicon and a silicon germanium alloy is formed in a pFET device region. A thermal anneal is then used to convert the fin stack into a silicon germanium alloy fin precursor. A thermal oxidation process follows that converts the silicon fin precursor into a silicon fin and the silicon germanium alloy fin precursor into a silicon germanium alloy fin. Functional gate structures can be formed straddling over each of the various fins.