The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 26, 2017
Filed:
May. 31, 2016
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Meng-Tze Chen, New Taipei, TW;
Chen-Hau Wu, New Taipei, TW;
Meng-Wei Chen, Taichung, TW;
Kuei-Shun Chen, Hsinchu, TW;
Yu-Chin Huang, Taipei, TW;
Li-Hsiang Lai, Hsinchu, TW;
Shih-Ming Chang, Hsinchu County, TW;
Ken-Hsien Hsieh, Taipei, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
Provided is a material composition and method for inhibiting the printing of SRAFs onto a substrate including coating a substrate with a resist layer. After coating the substrate, the resist layer is patterned to form a main feature pattern and at least one sub-resolution assist feature (SRAF) pattern within the resist layer. The main feature pattern may include resist sidewalls and a portion of a layer underlying the patterned resist layer. In various examples, a material composition is deposited over the patterned resist layer and into each of the main feature pattern and the at least one SRAF pattern. Thereafter, a material composition development process is performed to dissolve a portion of the material composition within the main feature pattern and to expose the portion of the layer underlying the patterned resist layer.