The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 05, 2017

Filed:

Feb. 22, 2016
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Chih-Liang Chen, Hsinchu, TW;

Chih-Ming Lai, Hsinchu, TW;

Yung-Sung Yen, New Taipei, TW;

Kam-Tou Sio, Zhubei, TW;

Tsong-Hua Ou, Taipei, TW;

Chun-Kuang Chen, Guanxi Township, TW;

Ru-Gun Liu, Zhubei, TW;

Shu-Hui Sung, Baoshan Township, TW;

Charles Chew-Yuen Young, Cupertino, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/118 (2006.01); H01L 23/528 (2006.01); H01L 23/522 (2006.01); H01L 27/02 (2006.01);
U.S. Cl.
CPC ...
H01L 23/528 (2013.01); H01L 23/5226 (2013.01); H01L 27/0207 (2013.01); H01L 27/11803 (2013.01); H01L 2924/0002 (2013.01);
Abstract

Semiconductor structures are provided. The semiconductor structure includes a plurality of gate structures extending in a first direction formed over a substrate. The gate structures follow the following equation: Pis the minimum value among gate pitches of the gate structures, and Lis the minimum value among gate lengths of the gate structures. His the minimum value among gate heights of the gate structures.


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