The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 15, 2017

Filed:

Mar. 13, 2014
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd, Hsin-Chu, TW;

Inventors:

Li-Guo Lee, Taipei, TW;

Yi-Chen Liu, Zhubei, Hsinchu County, TW;

Yung-Sheng Liu, Hsinchu, TW;

Yi-Jen Lai, Hsinchu, TW;

Chun-Jen Chen, Jhubei, Hsinchu County, TW;

Hsi-Kuei Cheng, Zhubei, Hsinchu County, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01);
U.S. Cl.
CPC ...
H01L 24/13 (2013.01); H01L 24/11 (2013.01); H01L 23/3192 (2013.01); H01L 24/03 (2013.01); H01L 24/05 (2013.01); H01L 2224/0345 (2013.01); H01L 2224/03912 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/05008 (2013.01); H01L 2224/05022 (2013.01); H01L 2224/0558 (2013.01); H01L 2224/05124 (2013.01); H01L 2224/05147 (2013.01); H01L 2224/05166 (2013.01); H01L 2224/05181 (2013.01); H01L 2224/05186 (2013.01); H01L 2224/05573 (2013.01); H01L 2224/05655 (2013.01); H01L 2224/05666 (2013.01); H01L 2224/119 (2013.01); H01L 2224/1145 (2013.01); H01L 2224/1147 (2013.01); H01L 2224/11462 (2013.01); H01L 2224/11821 (2013.01); H01L 2224/11827 (2013.01); H01L 2224/11848 (2013.01); H01L 2224/11849 (2013.01); H01L 2224/13006 (2013.01); H01L 2224/13007 (2013.01); H01L 2224/1357 (2013.01); H01L 2224/13082 (2013.01); H01L 2224/13083 (2013.01); H01L 2224/13111 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/13565 (2013.01); H01L 2224/13693 (2013.01); H01L 2924/13091 (2013.01);
Abstract

A semiconductor device structure and a manufacturing method are provided. The method includes forming a conductive pillar over a semiconductor substrate. The method also includes forming a solder layer over the conductive pillar. The method further includes forming a water-soluble flux over the solder layer. In addition, the method includes reflowing the solder layer to form a solder bump over the conductive pillar and form a sidewall protection layer over a sidewall of the conductive pillar during the solder layer is reflowed.


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