The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 08, 2017
Filed:
Jul. 25, 2016
Method to define multiple layer patterns with a single exposure by charged particle beam lithography
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Inventors:
Yen-Cheng Lu, New Taipei, TW;
Chih-Tsung Shih, Hsinchu, TW;
Jeng-Horng Chen, Hsin-Chu, TW;
Shinn-Sheng Yu, Hsinchu, TW;
Anthony Yen, Hsinchu, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/20 (2006.01); G03F 1/78 (2012.01); G03F 7/36 (2006.01); H01L 21/027 (2006.01); H01L 21/311 (2006.01); H01L 21/768 (2006.01); H01L 21/033 (2006.01); G03F 7/095 (2006.01);
U.S. Cl.
CPC ...
G03F 7/70558 (2013.01); G03F 1/78 (2013.01); G03F 7/095 (2013.01); G03F 7/20 (2013.01); G03F 7/2022 (2013.01); G03F 7/2037 (2013.01); G03F 7/2059 (2013.01); G03F 7/36 (2013.01); H01L 21/0274 (2013.01); H01L 21/0277 (2013.01); H01L 21/0332 (2013.01); H01L 21/0337 (2013.01); H01L 21/31144 (2013.01); H01L 21/76811 (2013.01); H01J 2237/31769 (2013.01); H01J 2237/31796 (2013.01);
Abstract
The present disclosure provides a method that includes forming a first patternable material layer on a substrate; forming a second patternable material layer over the first patternable material layer; and performing a charged particle beam lithography exposure process to the first patternable material layer and the second patternable material layer, thereby forming a first latent feature in the first patternable material layer.