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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9711371 B1

PDFFull Text
Date of Patent:
Jul. 18, 2017

Filed:

Oct. 29, 2015

Method of etching organic film

Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Akinori Kitamura, Miyagi, JP;

Kosuke Kariu, Miyagi, JP;

Toshihisa Ozu, Hwaseong-si, KR;

Hai Woo Lee, Hwaseong-si, KR;

Assignee:

TOKYO ELECTRON LIMITED, Tokyo, JP;

Attorney:

Pearne & Gordon LLP

Primary Examiner:

Jiong-Ping Lu

Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01J 37/32 (2006.01); H01L 21/3065 (2006.01); H01L 21/02 (2006.01); H01L 21/308 (2006.01); H01L 21/027 (2006.01); H01L 21/3213 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31138 (2013.01); H01J 37/3222 (2013.01); H01J 37/32192 (2013.01); H01L 21/02071 (2013.01); H01L 21/0271 (2013.01); H01L 21/308 (2013.01); H01L 21/3065 (2013.01); H01L 21/31116 (2013.01); H01L 21/31127 (2013.01); H01L 21/31144 (2013.01); H01L 21/32136 (2013.01); H01J 2237/334 (2013.01); H01J 2237/3341 (2013.01);
Abstract

An organic film can be etched while suppressing damage on an underlying layer. A method of etching the organic film includes etching the organic film within a processing vessel of a plasma processing apparatus which accommodates a processing target object. A processing gas containing a hydrogen gas and a nitrogen gas is supplied into the processing vessel, and plasma of the processing gas is generated. Further, a flow rate ratio of the hydrogen gas to a flow rate of the processing gas is set to be in a range from 35% to 75%, and a high frequency bias power for ion attraction to the processing target object is set to be in a range from 50 W to 135 W, in the etching of the organic film.

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