The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 20, 2017

Filed:

Jul. 03, 2014
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Koji Maruyama, Miyagi, JP;

Masato Horiguchi, Miyagi, JP;

Tetsuri Matsuki, Miyagi, JP;

Akira Koshiishi, Miyagi, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/306 (2006.01); H01J 37/32 (2006.01); H01L 21/02 (2006.01); H01L 21/3065 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32165 (2013.01); H01J 37/3244 (2013.01); H01J 37/32091 (2013.01); H01J 37/32357 (2013.01); H01J 37/32422 (2013.01); H01J 37/32532 (2013.01); H01J 37/32568 (2013.01); H01J 37/32816 (2013.01); H01L 21/02104 (2013.01); H01L 21/3065 (2013.01); H01L 21/67069 (2013.01); H01J 2237/332 (2013.01); H01J 2237/334 (2013.01);
Abstract

A plasma processing apparatus includes a dielectric member having communication holes through which an internal space communicates with a processing space; a first electrode and a second electrode; a first gas supply device which supplies a first processing gas; a first high frequency power supply which supplies a first high frequency power to at least one of the electrodes to generate a first plasma of the first processing gas; a depressurizing device which introduces the first processing gas and radicals in the first plasma; a second high frequency power supply which supplies a second high frequency power to generate a second plasma of the first processing gas and to attract ions; and a control unit which adjusts, by controlling a total amount of the first high frequency powers, the radical amount in the second plasma and adjusts, by controlling a ratio therebetween, the ion amount therein.


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