High fin cut fabrication process

Abstract

A method of forming fins on a substrate is provided. The method comprises depositing first fin spacers comprising first fin spacer material and second fin spacers comprising second fin spacer material on a plurality of locations on a substrate having a hard mask above the substrate's semiconductor material, wherein the first fin spacers comprise desired first fin spacers and dummy first fin spacers and the second fin spacers comprise desired second fin spacers and dummy second fin spacers. The method further comprises forming fins on the substrate under the first fin spacers and the second fin spacers. The fins comprise a plurality of dummy fins and a plurality of desired fins. The dummy fins comprise a plurality of dummy first fins formed under the dummy first fin spacers and a plurality of dummy second fins formed under the dummy second fin spacers. The method further comprises removing the dummy first fin spacers separately from removing the dummy second fin spacers, removing the dummy second fin spacers, and removing the dummy fins without damaging the desired fins.