The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 18, 2017
Filed:
Jun. 09, 2015
International Business Machines Corporation, Armonk, NY (US);
Kangguo Cheng, Schenectady, NY (US);
Ryan O. Jung, Rensselaer, NY (US);
Fee Li Lie, Albany, NY (US);
Eric R. Miller, Albany, NY (US);
Jeffrey C. Shearer, Albany, NY (US);
John R. Sporre, Albany, NY (US);
Sean Teehan, Rensselaer, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method and structure to enable reliable dielectric spacer endpoint detection by utilizing a sacrificial spacer fin are provided. The sacrificial spacer fin that is employed has a same pitch as the pitch of each semiconductor fin and the same height as the dielectric spacers on the sidewalls of each semiconductor fin. Exposed portions of the sacrificial spacer fin are removed simultaneously during a dielectric spacer reactive ion etch (RIE). The presence of the sacrificial spacer fin improves the endpoint detection of the spacer RIE and increases the endpoint signal intensity.