The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 18, 2017
Filed:
Sep. 30, 2014
Lam Research Corporation, Fremont, CA (US);
Jun Qian, Sherwood, OR (US);
Frank L. Pasquale, Beaverton, OR (US);
Adrien LaVoie, Newberg, OR (US);
Chloe Baldasseroni, Portland, OR (US);
Hu Kang, Tualatin, OR (US);
Shankar Swaminathan, Beaverton, OR (US);
Purushottam Kumar, Hillsboro, OR (US);
Paul Franzen, West Linn, OR (US);
Trung T. Le, Vancouver, WA (US);
Tuan Nguyen, Beaverton, OR (US);
Jennifer Petraglia, Portland, OR (US);
David Charles Smith, Lake Oswego, OR (US);
Seshasayee Varadarajan, Lake Oswego, OR (US);
Lam Research Corporation, Fremont, CA (US);
Abstract
Methods for depositing film on substrates are provided. In these embodiments, the substrates are processed in batches. Due to changing conditions within a reaction chamber as additional substrates in the batch are processed, various film properties may trend over the course of a batch. The methods herein can be used to address the trending of film properties over the course of a batch. More specifically, film property trending is minimized by changing the amount of RF power used to process substrates over the course of the batch. Such methods are sometimes referred to as RF compensation methods.