The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 28, 2017

Filed:

Apr. 10, 2014
Applicant:

Jsr Corporation, Tokyo, JP;

Inventors:

Kazuhiko Koumura, Tokyo, JP;

Shinya Minegishi, Tokyo, JP;

Takashi Mori, Tokyo, JP;

Kyoyu Yasuda, Tokyo, JP;

Yoshio Takimoto, Tokyo, JP;

Shinya Nakafuji, Tokyo, JP;

Toru Kimura, Tokyo, JP;

Assignee:

JSR CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/09 (2006.01); G03F 7/20 (2006.01); H01L 21/027 (2006.01); H01L 21/308 (2006.01); H01L 21/311 (2006.01); H01L 21/02 (2006.01); H01L 21/033 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3081 (2013.01); G03F 7/094 (2013.01); H01L 21/0271 (2013.01); H01L 21/02164 (2013.01); H01L 21/033 (2013.01); H01L 21/31116 (2013.01); H01L 21/31138 (2013.01);
Abstract

A pattern-forming method includes providing a resist underlayer film on a substrate using a resist underlayer film-forming composition. The resist underlayer film-forming composition includes a first polymer having a glass transition temperature of 0 to 180° C. A silicon-based oxide film is provided on a surface of the resist underlayer film. A resist pattern is provided on a surface of the silicon-based oxide film using a resist composition. The silicon-based oxide film and the resist underlayer film are sequentially dry-etched using the resist pattern as a mask. The substrate is dry-etched using the dry-etched resist underlayer film as a mask.


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