The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 21, 2017
Filed:
Feb. 28, 2013
Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;
International Business Machines Corporation, Armonk, NY (US);
Stmicroelectronics, Inc., Coppell, TX (US);
Maud Vinet, Rives sur Fure, FR;
Kangguo Cheng, Albany, NY (US);
Bruce Doris, Slingerlands, NY (US);
Laurent Grenouillet, Rives sur Fure, FR;
Ali Khakifirooz, San Jose, CA (US);
Yannick Le Tiec, Crolles, FR;
Qing Liu, Guilderland, NY (US);
COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, Paris, FR;
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
STMicroelectronics, Inc., Coppell, TX (US);
Abstract
An integrated circuit, including: a UTBOX layer; a first cell, including: FDSOI transistors; a first STI separating the transistors; a first ground plane located beneath one of the transistors and beneath the UTBOX layer; a first well; a second cell, including: FDSOI transistors; a second STI separating the transistors; a second ground plane located beneath one of the transistors and beneath the UTBOX layer; a second well; a third STI separating the cells, reaching the bottom of the first and second wells; a deep well extending continuously beneath the first and second wells, having a portion beneath the third STI whose doping density is at least 50% higher than the doping density of the deep well beneath the first and second STIs.