The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 28, 2017
Filed:
May. 21, 2014
Tokyo Electron Limited, Minato-ku, Tokyo, JP;
Linan Ji, Shanghai, CH;
Hidekazu Hayashi, Yokohama, JP;
Hiroshi Tomita, Yokohama, JP;
Hisashi Okuchi, Yokohama, JP;
Yohei Sato, Yokohama, JP;
Takayuki Toshima, Koshi, JP;
Mitsuaki Iwashita, Nirasaki, JP;
Kazuyuki Mitsuoka, Nirasaki, JP;
Gen You, Nirasaki, JP;
Hiroki Ohno, Nirasaki, JP;
Takehiko Orii, Nirasaki, JP;
Tokyo Electron Limited, Tokyo, JP;
Abstract
A supercritical drying method for a semiconductor substrate is disclosed. The method may include introducing the semiconductor substrate into a chamber in a state, a surface of the semiconductor substrate being wet with alcohol, substituting the alcohol on the semiconductor substrate with a supercritical fluid of carbon dioxide by impregnating the semiconductor substrate to the supercritical fluid in the chamber, and discharging the supercritical fluid and the alcohol from the chamber and reducing a pressure inside the chamber. The method may also include performing a baking treatment by supplying an oxygen gas or an ozone gas to the chamber after the reduction of the pressure inside the chamber.