The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 2017
Filed:
Oct. 20, 2014
Tohoku University, Sendai-shi, Miyagi, JP;
Shoji Ikeda, Sendai, JP;
Hideo Sato, Sendai, JP;
Shunsuke Fukami, Sendai, JP;
Michihiko Yamanouchi, Sendai, JP;
Fumihiro Matsukura, Sendai, JP;
Hideo Ohno, Sendai, JP;
Shinya Ishikawa, Sendai, JP;
TOHOKU UNIVERSITY, Sendai-shi, JP;
Abstract
A magnetoresistance effect element and a magnetic memory having thermal stability expressed by a thermal stability factor of 70 or more even with a fine junction size. The magnetoresistance effect element includes a first magnetic layer of an invariable magnetization direction forming a reference layer, a second magnetic layer of a variable magnetization direction forming a recording layer, and a first non-magnetic layer disposed between the first and second magnetic layers in a thickness direction of the first and second magnetic layers. At least one of the first and second magnetic layers has the following relationship between D (nm) and t (nm): D<0.9t+13, where D is a junction size corresponding to the length of a longest straight line on an end surface perpendicular to the thickness direction, and t is a layer thickness. The junction size is 30 nm or less.