The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 2017
Filed:
Sep. 14, 2015
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Chieh-Han Wu, Kaohsiung, TW;
Cheng-Hsiung Tsai, Miaoli County, TW;
Chung-Ju Lee, Hsinchu, TW;
Ming-Feng Shieh, Tainan County, TW;
Ru-Gun Liu, Hsinchu County, TW;
Shau-Lin Shue, Hsinchu, TW;
Tien-I Bao, Taoyuan County, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A method of forming a target pattern includes forming a plurality of lines over a substrate with a first mask and forming a first spacer layer over the substrate, over the plurality of lines, and onto sidewalls of the plurality of lines. The plurality of lines is removed, thereby providing a patterned first spacer layer over the substrate. The method further includes forming a second spacer layer over the substrate, over the patterned first spacer layer, and onto sidewalls of the patterned first spacer layer, and forming a patterned material layer over the second spacer layer with a second mask. Whereby, the patterned material layer and the second spacer layer collectively define a plurality of trenches.