The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 14, 2017
Filed:
Feb. 28, 2013
Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;
International Business Machines Corporation, Armonk, NY (US);
Stmicroelectronics, Inc., Coppell, TX (US);
Maud Vinet, Rives sur Fure, FR;
Kangguo Cheng, Albany, NY (US);
Bruce Doris, Slingerlands, NY (US);
Laurent Grenouillet, Rives sur Fure, FR;
Ali Khakifirooz, San Jose, CA (US);
Yannick Le Tiec, Crolles, FR;
Qing Liu, Guilderland, NY (US);
COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, Paris, FR;
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
STMicroelectronics, Inc., Coppell, TX (US);
Abstract
An integrated circuit, including: a first cell, including: FDSOI transistors; a UTBOX layer lying beneath the transistors; a first well lying beneath the insulator layer and beneath the transistors, the first well having a first type of doping; a first ground plane having a second type of doping, located beneath one of the transistors and between the insulator layer and the first well; a first STI separating the transistors and crossing the insulator layer; a first conductive element forming an electrical connection between the first well and the first ground plane, located under the first STI; a second cell including a second well; a second STI separating the cells, crossing the insulator layer and reaching the bottom of the first and second wells.