The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 14, 2017
Filed:
Dec. 22, 2014
Lam Research Corporation, Fremont, CA (US);
Meihua Shen, Fremont, CA (US);
Ji Zhu, Castro Valley, CA (US);
Shuogang Huang, San Jose, CA (US);
Baosuo Zhou, Redwood City, CA (US);
John Hoang, Fremont, CA (US);
Prithu Sharma, Santa Clara, CA (US);
Thorsten Lill, Santa Clara, CA (US);
Lam Research Corporation, Fremont, CA (US);
Abstract
A method of opening a barrier film below copper structures in a stack is provided. A pulsed gas is provided into a plasma processing chamber, wherein the providing the pulsed gas comprises providing a pulsed Hcontaining gas and providing a pulsed halogen containing gas, wherein the pulsed Hcontaining gas and the pulsed halogen containing gas are pulsed out of phase, and wherein the pulsed Hcontaining gas has an Hhigh flow period and the pulsed halogen containing gas has a halogen containing gas high flow period, wherein the Hhigh flow period is greater than the halogen containing gas high flow period. The pulsed gas is formed into a plasma. The copper structures and the barrier film are exposed to the plasma, which etches the barrier film. In another embodiment, a wet and dry cyclical process may be used.