logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9559134 B1

PDFFull Text
Date of Patent:
Jan. 31, 2017

Filed:

Dec. 09, 2014

Deep trench spacing isolation for complementary metal-oxide-semiconductor (cmos) image sensors

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Inventors:

Tai-I Yang, Hsinchu, TW;

Jung-I Lin, Hsinchu, TW;

Ta-Chun Lin, Zhubei, TW;

Tien-Lu Lin, Hsinchu, TW;

Chen-Jong Wang, Hsin-Chu, TW;

Assignee:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Attorney:

Eschweiler & Associates, LLC

Primary Examiner:

Shouxiang Hu

Int. Cl.
CPC ...
H01L 27/148 (2006.01); H01L 29/768 (2006.01); H01L 29/00 (2006.01); H01L 27/146 (2006.01); H01L 27/092 (2006.01); H01L 29/94 (2006.01); H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1463 (2013.01); H01L 27/0921 (2013.01); H01L 27/1203 (2013.01); H01L 27/14632 (2013.01); H01L 27/14643 (2013.01); H01L 27/14654 (2013.01); H01L 27/14689 (2013.01); H01L 29/945 (2013.01);
Abstract

An image sensor employing deep trench spacing isolation is provided. A plurality of pixel sensors is arranged over or within a semiconductor substrate. A trench is arranged in the semiconductor substrate around and between adjacent ones of the plurality of pixel sensors, and the trench has a gap located between sidewalls of the trench. A cap is arranged over or within the trench at a position overlying the gap. The cap seals the gap within the trench. A method of manufacturing the image sensor is also provided.

Find Patent Forward Citations

Quick Actions:

Yang, Tai-I. (2017). Deep trench spacing isolation for complementary metal-oxide-semiconductor (cmos) image sensors (U.S. Patent No. 9559134). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9559134

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…