The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 27, 2016
Filed:
Feb. 24, 2015
United Microelectronics Corp., Hsin-Chu, TW;
Li-Wei Feng, Kaohsiung, TW;
Shih-Hung Tsai, Tainan, TW;
Chao-Hung Lin, Changhua County, TW;
Hon-Huei Liu, Kaohsiung, TW;
An-Chi Liu, Tainan, TW;
Chih-Wei Wu, New Taipei, TW;
Jyh-Shyang Jenq, Pingtung County, TW;
Shih-Fang Hong, Tainan, TW;
En-Chiuan Liou, Tainan, TW;
Ssu-I Fu, Kaohsiung, TW;
Yu-Hsiang Hung, Tainan, TW;
Chih-Kai Hsu, Tainan, TW;
Mei-Chen Chen, Tainan, TW;
Chia-Hsun Tseng, Tainan, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
A method of forming a semiconductor structure includes following steps. First of all, a patterned hard mask layer having a plurality of mandrel patterns is provided. Next, a plurality of first mandrels is formed on a substrate through the patterned hard mask. Following these, at least one sidewall image transferring (SIT) process is performed. Finally, a plurality of fins is formed in the substrate, wherein each of the fins has a predetermined critical dimension (CD), and each of the mandrel patterns has a CD being 5-8 times greater than the predetermined CD.