The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 29, 2016
Filed:
Aug. 26, 2014
United Microelectronics Corp., Hsin-Chu, TW;
Wen-Yin Weng, Taichung, TW;
Cheng-Tung Huang, Kaohsiung, TW;
Ya-Ru Yang, New Taipei, TW;
Yi-Ting Wu, Taipei, TW;
Yu-Ming Lin, Tainan, TW;
Jen-Yu Wang, Tainan, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
A method for fabricating substrate of a semiconductor device is disclosed. The method includes the steps of: providing a first silicon layer; forming a dielectric layer on the first silicon layer; bonding a second silicon layer to the dielectric layer; removing part of the second silicon layer and part of the dielectric layer to define a first region and a second region on the first silicon layer, wherein the remaining of the second silicon layer and the dielectric layer are on the second region; and forming an epitaxial layer on the first region of the first silicon layer, wherein the epitaxial layer and the second silicon layer comprise same crystalline orientation.