The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 22, 2016
Filed:
Mar. 24, 2014
Michael B. Vincent, Chandler, AZ (US);
Trung Q. Duong, Austin, TX (US);
Zhiwei Gong, Chandler, AZ (US);
Scott M. Hayes, Chandler, AZ (US);
Alan J. Magnus, Gilbert, AZ (US);
Douglas G. Mitchell, Tempe, AZ (US);
Eduard J. Pabst, Mesa, AZ (US);
Jason R. Wright, Chandler, AZ (US);
Weng F. Yap, Chandler, AZ (US);
Michael B. Vincent, Chandler, AZ (US);
Trung Q. Duong, Austin, TX (US);
Zhiwei Gong, Chandler, AZ (US);
Scott M. Hayes, Chandler, AZ (US);
Alan J. Magnus, Gilbert, AZ (US);
Douglas G. Mitchell, Tempe, AZ (US);
Eduard J. Pabst, Mesa, AZ (US);
Jason R. Wright, Chandler, AZ (US);
Weng F. Yap, Chandler, AZ (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
Wafer level packages and methods for producing wafer level packages having delamination-resistant redistribution layers are provided. In one embodiment, the method includes building inner redistribution layers over a semiconductor die. Inner redistribution layers include a body of dielectric material containing metal routing features. A routing-free dielectric block is formed in the body of dielectric material and is uninterrupted by the metal routing features. An outer redistribution layer is produced over the inner redistribution layers and contains a metal plane, which is patterned to include one or more outgassing openings overlying the routing-free dielectric block. The routing-free dielectric block has a minimum width, length, and depth each at least twice the thickness of the outer redistribution layer.