The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 01, 2016
Filed:
Oct. 29, 2015
United Microelectronics Corp., Hsin-Chu, TW;
Chao-Hung Lin, Changhua County, TW;
Li-Wei Feng, Kaohsiung, TW;
Shih-Hung Tsai, Tainan, TW;
Jyh-Shyang Jenq, Pingtung County, TW;
Ching-Ling Lin, Kaohsiung, TW;
Yi-Wen Chen, Tainan, TW;
Chen-Ming Huang, Taipei, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
A method of removing a hard mask on a gate includes forming a first gate structure and a second gate structure. The first gate structure includes a first gate, a first hard mask disposed on the first gate and a first spacer surrounding the first gate and the first hard mask, wherein the second gate structure includes a second gate, a second hard mask disposed on the second gate and a second spacer surrounding the second gate and the second hard mask. Later, the first spacer surrounding the first hard mask and the second spacer surrounding the second hard mask are removed. After that, a dielectric layer is formed to cover the first hard mask and the second hard mask. Finally, the second dielectric layer, the first mask layer and the second mask layer are removed.