The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 20, 2016

Filed:

Dec. 30, 2014
Applicant:

Rohm and Haas Electronic Materials Llc, Marlborough, MA (US);

Inventors:

Cong Liu, Shrewsbury, MA (US);

Seung-Hyun Lee, Gyeonggi Do, KR;

Kevin Rowell, Brighton, MA (US);

Gerhard Pohlers, Needham, MA (US);

Cheng-Bai Xu, Southborough, MA (US);

Wenyan Yin, Northborough, MA (US);

Thomas A. Estelle, Northborough, MA (US);

Shintaro Yamada, Shrewsbury, MA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/004 (2006.01); G03F 7/40 (2006.01); G03F 7/039 (2006.01);
U.S. Cl.
CPC ...
G03F 7/405 (2013.01); G03F 7/0392 (2013.01);
Abstract

Provided are compositions and methods for trimming a photoresist pattern. The photoresist pattern trimming composition comprises: a matrix polymer comprising a unit formed from a monomer of the following general formula (I): wherein: Ris chosen from hydrogen, fluorine, C-Calkyl and C-Cfluoroalkyl; Ris chosen from C-Calkylene; and Ris chosen from C-Cfluoroalkyl; an aromatic acid that is free of fluorine; and a solvent. The compositions and methods find particular applicability in the manufacture of semiconductor devices.


Find Patent Forward Citations

Loading…