The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 30, 2016
Filed:
Oct. 01, 2014
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Yung-Hsu Wu, Taipei, TW;
Cheng-Hsiung Tsai, Zhunan Township, Miaoli County, TW;
Yu-Sheng Chang, Taipei, TW;
Chia-Tien Wu, Taichung, TW;
Chung-Ju Lee, Hsinchu, TW;
Yung-Sung Yen, New Taipei, TW;
Chun-Kuang Chen, Guanxi Township, Hsinchu County, TW;
Tien-I Bao, Dayuan Township, Taoyuan County, TW;
Ru-Gun Liu, Zhubei, TW;
Shau-Lin Shue, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
Methods of semiconductor device fabrication are provided including those that provide a substrate having a plurality of trenches disposed in a dielectric layer formed above the substrate. A via pattern including a plurality of openings may be defined above the substrate. A spacer material layer is formed on a sidewall at least one trench. Via holes can be etched in the dielectric layer using the via pattern and spacer material layer as a masking element.