The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 16, 2016
Filed:
Nov. 06, 2015
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Tsung-Min Huang, Taichung, TW;
Chieh-Han Wu, Kaohsiung, TW;
Chung-Ju Lee, Hsinchu, TW;
Chih-Tsung Shih, Hsinchu, TW;
Jeng-Horng Chen, Hsin-Chu, TW;
Shinn-Sheng Yu, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsin-Chu, TW;
Abstract
A method includes forming a resist over a substrate, resulting in a layer of resist scum between the resist and the substrate. The method further includes forming trenches in the resist, wherein at least a portion of the layer of resist scum remains between the trenches and the substrate. The method further includes forming a first material layer in the trenches, wherein the first material layer has a higher etch resistance than the resist in an etching process. The method further includes performing the etching process to the first material layer, the resist, and the layer of resist scum, thereby forming a patterned first material layer over a patterned layer of resist scum over the substrate.