The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 09, 2016
Filed:
Aug. 04, 2015
United Microelectronics Corp., Hsin-Chu, TW;
Jia-Jia Chen, Taichung, TW;
Chi-Mao Hsu, Tainan, TW;
Tsun-Min Cheng, Changhua County, TW;
Chun-Ling Lin, Tainan, TW;
Huei-Ru Tsai, Kaohsiung, TW;
Ching-Wei Hsu, Changhua County, TW;
Chin-Fu Lin, Tainan, TW;
Hsin-Yu Chen, Nantou County, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
A through silicon via structure is located in a recess of a substrate. The through silicon via structure includes a barrier layer, a buffer layer and a conductive layer. The barrier layer covers a surface of the recess. The buffer layer covers the barrier layer. The conductive layer is located on the buffer layer and fills the recess, wherein the contact surface between the conductive layer and the buffer layer is smoother than the contact surface between the buffer layer and the barrier layer. Moreover, a through silicon via process forming said through silicon via structure is also provided.