The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 09, 2016
Filed:
Feb. 13, 2015
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Yung-Sung Yen, New Taipei, TW;
Chung-Ju Lee, Hsinchu, TW;
Chun-Kuang Chen, Hsinchu County, TW;
Chia-Tien Wu, Taichung, TW;
Ta-Ching Yu, Hsinchu County, TW;
Kuei-Shun Chen, Hsinchu, TW;
Ru-Gun Liu, Hsinchu County, TW;
Shau-Lin Shue, Hsinchu, TW;
Tsai-Sheng Gau, HsinChu, TW;
Yung-Hsu Wu, Taipei, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsin-Chu, TW;
Abstract
A method for fabricating a semiconductor device includes forming a hard mask (HM) layer over a material layer, forming a first trench in the HM layer, which extends along a first direction. The method also includes forming a first patterned resist layer over the HM layer. The first patterned resist layer has a first opening and a second opening a second direction. The first opening overlaps with the first trench in a middle portion of the first trench and the second opening overlaps with the first trench at an end portion of the first trench. The method also includes etching the HM layer through the first patterned resist layer to form a second trench and a third trench in the HM layer and forming a first feature to fill in a section of the first trench between the second trench and the third trench.