The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 12, 2016
Filed:
Dec. 22, 2014
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Kensaku Narushima, Nirasaki, JP;
Kohichi Satoh, Nirasaki, JP;
Motoko Nakagomi, Nirasaki, JP;
Eiichi Komori, Nirasaki, JP;
Taiki Katou, Tsukuba, JP;
Assignee:
TOKYO ELECTRON LIMITED, Tokyo, JP;
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01); H01L 21/306 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
H01L 21/30604 (2013.01); H01L 21/6708 (2013.01); H01L 21/67069 (2013.01);
Abstract
There is a method of selectively etching a silicon oxide film among a silicon nitride film and the silicon oxide film formed on a surface of a substrate to be processed, the method including: under a vacuum atmosphere, intermittently supplying at least one of a first processing gas composed of a hydrogen fluoride gas and an ammonia gas and a second processing gas composed of a compound of nitrogen, hydrogen and fluorine, to the substrate to be processed multiple times.