The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 12, 2016
Filed:
Dec. 30, 2013
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Hung-Chun Wang, Taichung, TW;
Ming-Hui Chih, Taipei County, TW;
Yu-Po Tang, Taipei, TW;
Chia-Ping Chiang, Taipei, TW;
Feng-Ju Chang, Hsinchu, TW;
Cheng Kun Tsai, Hsinchu, TW;
Wen-Chun Huang, Tainan, TW;
Ru-Gun Liu, Hsinchu County, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A method for performing optical proximity correction (OPC) and evaluating OPC solutions is disclosed. An exemplary method includes receiving a design database corresponding to an IC circuit mask. A first OPC modification to a mask feature of the design database is made by performing a first OPC process. The OPC process includes: dividing the mask feature into child shapes and adjusting an attribute of a child shape based on an edge placement error (EPE) factor. A first lithography simulation is performed utilizing a first set of performance indexes after making the first OPC modification, and a second OPC modification to the mask feature is made based on a result of the first lithography simulation. A second lithography simulation of the mask feature is performed utilizing a second set of performance indexes to verify the first and second OPC modifications, and the design database is provided for manufacturing.