The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 05, 2016

Filed:

Mar. 03, 2014
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Jhih-Yu Wang, New Taipei, TW;

Chien-Yu Li, Hsinchu, TW;

Iu-Ren Chen, Taipei, TW;

Chi-Cheng Hung, Miaoli County, TW;

Wei-Liang Lin, Hsin-Chu, TW;

Chun-Kuang Chen, Hsin-Chu Hsien, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/20 (2006.01);
U.S. Cl.
CPC ...
G03F 7/70641 (2013.01); G03F 7/70625 (2013.01);
Abstract

A method for lithography exposing process is provided. The method includes performing a first lithography exposing process to a resist layer using a mask having a focus-sensitive pattern and an energy-sensitive pattern; measuring critical dimensions (CDs) of transferred focus-sensitive pattern and transferred energy-sensitive pattern on the resist layer; extracting Bossung curves from the CDs; and determining slopes of the Bossung curves.


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Wang, Jhih-Yu. (2016). Method and structure for lithography processes with focus monitoring and control (U.S. Patent No. 9383657). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9383657

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