The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 26, 2016
Filed:
Sep. 20, 2013
Tokyo Electron Limited, Tokyo, JP;
Naoki Matsumoto, Miyagi, JP;
Yugo Tomita, Miyagi, JP;
Naoki Mihara, Miyagi, JP;
Kazuki Takahashi, Miyagi, JP;
Michitaka Aita, Miyagi, JP;
Jun Yoshikawa, Miyagi, JP;
Takahiro Senda, Miyagi, JP;
Yoshiyasu Sato, Miyagi, JP;
Kazuyuki Kato, Miyagi, JP;
Kenji Sudou, Miyagi, JP;
Hitoshi Mizusugi, Tokyo, JP;
TOKYO ELECTRON LIMITED, Tokyo, JP;
Abstract
In a plasma processing apparatus of an exemplary embodiment, energy of microwaves is introduced from an antenna into the processing container through a dielectric window. The plasma processing apparatus includes a central introducing unit and a peripheral introducing unit. A central introduction port of the central introducing unit injects a gas just below the dielectric window. A plurality of peripheral introduction ports of the peripheral introducing unit injects a gas towards a periphery of the placement region. The central introducing unit is connected to with a plurality of first gas sources including a reactive gas source and a rare gas source through a plurality of first flow rate control units. The peripheral introducing unit is connected to with a plurality of second gas sources including a reactive gas source and a rare gas source through a plurality of second flow rate control units.