The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 29, 2016

Filed:

Mar. 11, 2011
Applicants:

Jens Arno Steinhoff, Straelen, DE;

Vadim Yevgenyevich Banine, Deurne, NL;

Richard Joseph Bruls, Eindhoven, NL;

Erik Roelof Loopstra, Eindhoven, NL;

Hendrik Antony Johannes Neerhof, Eindhoven, NL;

Adrianus Johannes Maria Van Dijk, Veldhoven, NL;

Andrei Mikhailovich Yakunin, Eindhoven, NL;

Luigi Scaccabarozzi, Valkenswaard, NL;

Inventors:

Jens Arno Steinhoff, Straelen, DE;

Vadim Yevgenyevich Banine, Deurne, NL;

Richard Joseph Bruls, Eindhoven, NL;

Erik Roelof Loopstra, Eindhoven, NL;

Hendrik Antony Johannes Neerhof, Eindhoven, NL;

Adrianus Johannes Maria Van Dijk, Veldhoven, NL;

Andrei Mikhailovich Yakunin, Eindhoven, NL;

Luigi Scaccabarozzi, Valkenswaard, NL;

Assignee:

ASML NETHERLANDS B.V., Veldhoven, NL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03B 27/42 (2006.01); G03F 7/20 (2006.01); H05G 2/00 (2006.01);
U.S. Cl.
CPC ...
G03F 7/70916 (2013.01); H05G 2/003 (2013.01);
Abstract

A contaminant trap is used in an EUV radiation source apparatus. An EUV radiation beam is generated and focused through a low pressure gaseous atmosphere into a virtual source point. The EUV radiation creates a plasma in the low pressure hydrogen atmosphere through which it passes. A contaminant trap including electrodes is located in or around radiation beam as it approaches the virtual source point. A DC biasing source is connected to the electrodes to create an electric field oriented to deflect out of the beam path contaminant particles that have been negatively charged by the plasma. Additional RF electrodes and/or an ionizer enhance the plasma to increase the charging of the particles. The deflecting electrodes can be operated with RF bias for a short time, to ensure dissipation of the enhanced plasma.


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