The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 15, 2016
Filed:
Apr. 01, 2015
Globalfoundries Inc., Grand Cayman, KY;
International Business Machines Corporation, Armonk, NY (US);
Stmicroelectronics, Inc., Coppell, TX (US);
Xiuyu Cai, Niskayuna, NY (US);
Ajey Poovannummoottil Jacob, Watervliet, NY (US);
Ruilong Xie, Niskayuna, NY (US);
Bruce Doris, Slingerlands, NY (US);
Kangguo Cheng, Schenectady, NY (US);
Jason R. Cantone, Mechanicville, NY (US);
Sylvie Mignot, Slingerlands, NY (US);
David Moreau, Cohoes, NY (US);
Muthumanickam Sankarapandian, Niskayuna, NY (US);
Pierre Morin, Albany, NY (US);
Su Chen Fan, Cohoes, NY (US);
Kisik Choi, Hopewell Junction, NY (US);
Murat K. Akarvardar, Saratoga Springs, NY (US);
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
International Business Machines Corporation, Armonk, NY (US);
STMicroelectronics, Inc., Coppell, TX (US);
Abstract
A method includes forming a plurality of fin elements above a substrate. A mask is formed above the substrate. The mask has an opening defined above at least one selected fin element of the plurality of fin elements. An ion species is implanted into the at least one selected fin element through the opening to increase its etch characteristics relative to the other fin elements. The at least one selected fin element is removed selectively relative to the other fin elements.