The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 08, 2016

Filed:

Oct. 30, 2013
Applicants:

Alan J. Magnus, Gilbert, AZ (US);

Trung Q. Duong, Austin, TX (US);

Zhiwei Gong, Chandler, AZ (US);

Scott M. Hayes, Chandler, AZ (US);

Douglas G. Mitchell, Tempe, AZ (US);

Michael B. Vincent, Chandler, AZ (US);

Jason R. Wright, Chandler, AZ (US);

Weng F. Yap, Phoenix, AZ (US);

Inventors:

Alan J. Magnus, Gilbert, AZ (US);

Trung Q. Duong, Austin, TX (US);

Zhiwei Gong, Chandler, AZ (US);

Scott M. Hayes, Chandler, AZ (US);

Douglas G. Mitchell, Tempe, AZ (US);

Michael B. Vincent, Chandler, AZ (US);

Jason R. Wright, Chandler, AZ (US);

Weng F. Yap, Phoenix, AZ (US);

Assignee:

FREESCALE SEMICONDUCTOR INC., Austin, TX (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 21/56 (2006.01);
U.S. Cl.
CPC ...
H01L 24/97 (2013.01); H01L 24/19 (2013.01); H01L 24/20 (2013.01); H01L 24/96 (2013.01); H01L 21/568 (2013.01); H01L 2224/04105 (2013.01); H01L 2224/12105 (2013.01); H01L 2224/97 (2013.01); H01L 2924/12042 (2013.01); H01L 2924/181 (2013.01);
Abstract

Microelectronic packages having layered interconnect structures are provided, as are methods for the fabrication thereof. In one embodiment, the method includes forming a first plurality of interconnect lines in ohmic contact with a first bond pad row provided on a semiconductor. A dielectric layer is deposited over the first plurality of interconnect lines, the first bond pad row, and a second bond pad row adjacent the first bond pad row. A trench via is then formed in the dielectric layer to expose at least the second bond pad row therethrough. A second plurality of interconnect lines is formed in ohmic contact with the second bond pad row within the trench via. The second plurality of interconnect lines extends over the first bond pad row and is electrically isolated therefrom by the dielectric layer to produce at least a portion of the layered interconnect structure.


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