The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 08, 2016
Filed:
Sep. 03, 2014
Taiwan Semiconductor Manufacturing Co., Ltd, Hsin-Chu, TW;
Chih-Liang Chen, Hsinchu, TW;
Chih-Ming Lai, Hsinchu, TW;
Yung-Sung Yen, New Taipei, TW;
Kam-Tou Sio, Zhubei, TW;
Tsong-Hua Ou, Taipei, TW;
Chun-Kuang Chen, Guanxi Township, TW;
Ru-Gun Liu, Zhubei, TW;
Shu-Hui Sung, Baoshan Township, TW;
Charles Chew-Yuen Young, Cupertino, CA (US);
Taiwan Semiconductor Manufacturing Co., LTD., Hsin-Chu, TW;
Abstract
Semiconductor structures are provided. The semiconductor structure includes a plurality of gate structures extending in a first direction formed over a substrate and a contact formed adjacent to the gate structures over the substrate. The semiconductor structure further includes a plurality of metal layers formed over the gate structures. In addition, some of the metal layers include metal lines extending in the first direction, and some of the metal layers include metal lines extending in a second direction substantially perpendicular to the first direction. Furthermore, the gate structures follow the following equation: Pis the minimum value among gate pitches of the gate structures. Lis the minimum value among gate lengths of the gate structures. His the minimum value among gate heights of the gate structures.