The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 01, 2016

Filed:

Mar. 06, 2014
Applicant:

Xintec Inc., Zhongli, Taoyuan County, TW;

Inventors:

Yung-Tai Tsai, New Taipei, TW;

Shu-Ming Chang, New Taipei, TW;

Chun-Wei Chang, New Taipei, TW;

Chien-Hui Chen, Zhongli, TW;

Tsang-Yu Liu, Zhubei, TW;

Yen-Shih Ho, Kaohsiung, TW;

Assignee:

XINTEC INC., Taoyuan, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 21/78 (2006.01);
U.S. Cl.
CPC ...
H01L 24/05 (2013.01); H01L 21/78 (2013.01); H01L 23/3185 (2013.01); H01L 23/3192 (2013.01); H01L 24/03 (2013.01); H01L 2224/02371 (2013.01); H01L 2224/04042 (2013.01); H01L 2224/05124 (2013.01); H01L 2224/05548 (2013.01); H01L 2224/05568 (2013.01); H01L 2224/05624 (2013.01); H01L 2224/94 (2013.01); H01L 2924/10156 (2013.01); H01L 2924/1461 (2013.01);
Abstract

A semiconductor structure includes a wafer, at least one nonmetal oxide layer, a pad, a passivation layer, an isolation layer, and a conductive layer. The wafer has a first surface, a second surface, a third surface, a first stage difference surface connected between the second and third surfaces, and a second stage difference surface connected between the first and third surfaces. The nonmetal oxide layer is located on the first surface of the wafer. The pad is located on the nonmetal oxide layer and electrically connected to the wafer. The passivation layer is located on the nonmetal oxide layer. The isolation layer is located on the passivation layer, nonmetal oxide layer, the first, second and third surfaces of the wafer, and the first and second stage difference surfaces of the wafer. The conductive layer is located on the isolation layer and electrically contacts the pad.


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