The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 05, 2016
Filed:
Mar. 28, 2013
Intel Corporation, Santa Clara, CA (US);
Charles C. Kuo, Hillsboro, OR (US);
Kaan Oguz, Dublin, IE;
Brian S. Doyle, Portland, OR (US);
Elijah V. Karpov, Santa Clara, CA (US);
Roksana Golizadeh Mojarad, San Jose, CA (US);
David L. Kencke, Beaverton, OR (US);
Robert S. Chau, Portland, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
An embodiment includes a magnetic tunnel junction (MTJ) including a free magnetic layer, a fixed magnetic layer, and a tunnel barrier between the free and fixed layers; the tunnel barrier directly contacting a first side of the free layer; and an oxide layer directly contacting a second side of the free layer; wherein the tunnel barrier includes an oxide and has a first resistance-area (RA) product and the oxide layer has a second RA product that is lower than the first RA product. The MTJ may be included in a perpendicular spin torque transfer memory. The tunnel barrier and oxide layer form a memory having high stability with an RA product not substantively higher than a less stable memory having a MTJ with only a single oxide layer. Other embodiments are described herein.