The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 15, 2015

Filed:

Mar. 26, 2012
Applicants:

Kazuya Dobashi, Nirasaki, JP;

Kensuke Inai, Nirasaki, JP;

Akitaka Shimizu, Nirasaki, JP;

Kenta Yasuda, Nirasaki, JP;

Yu Yoshino, Moriyama, JP;

Toshihiro Aida, Tokyo, JP;

Takehiko Senoo, Osaka, JP;

Inventors:

Kazuya Dobashi, Nirasaki, JP;

Kensuke Inai, Nirasaki, JP;

Akitaka Shimizu, Nirasaki, JP;

Kenta Yasuda, Nirasaki, JP;

Yu Yoshino, Moriyama, JP;

Toshihiro Aida, Tokyo, JP;

Takehiko Senoo, Osaka, JP;

Assignees:

TOKYO ELECTRON LIMITED, Tokyo, JP;

IWATANI CORPORATION, Osaka-shi, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/67 (2006.01); C23C 16/455 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01L 21/67028 (2013.01); C23C 16/45563 (2013.01); C23C 16/45574 (2013.01); C23C 16/45582 (2013.01); C23C 16/45587 (2013.01); H01L 21/67051 (2013.01); H01J 37/321 (2013.01); H01J 37/3244 (2013.01); H01J 37/32449 (2013.01); H01L 21/67069 (2013.01);
Abstract

A substrate cleaning apparatus includes a supporting unit, provided in a processing chamber having a gas exhaust port, for supporting a substrate; one or more nozzle units, each for ejecting gas clusters to a peripheral portion of the substrate supported by the supporting unit to remove unnecessary substances from the peripheral portion; and a moving mechanism for changing relative positions of the supporting unit and the nozzle unit during ejecting the gas clusters. Each nozzle unit discharges a cleaning gas having a pressure higher than that in the processing chamber so that the cleaning gas is adiabatically expanded to form aggregates of atoms and/or molecules.


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