The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 17, 2015
Filed:
Aug. 22, 2013
Applicant:
Asm Ip Holding B.v., Almere, NL;
Inventors:
Dai Ishikawa, Ome, JP;
Kiyohiro Matsushita, Fuchu, JP;
Akinori Nakano, Ota-ku, NL;
Shintaro Ueda, Tama, JP;
Hirofumi Arai, Sagamihara, JP;
Assignee:
ASM IP Holding B.V., Almere, NL;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/31 (2006.01); H01L 21/469 (2006.01); H01L 21/02 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02126 (2013.01); H01L 21/0234 (2013.01); H01L 21/02216 (2013.01); H01L 21/02271 (2013.01); H01L 21/02274 (2013.01); H01L 21/02323 (2013.01); H01L 21/02337 (2013.01); H01L 21/02348 (2013.01); H01L 21/67115 (2013.01); H01L 21/67207 (2013.01);
Abstract
A method for forming a modified low-k SiOCH film on a substrate, includes: providing a low-k SiOCH film formed on a substrate by flowable CVD; exposing the low-k SiOCH film to a gas containing a Si—N bond in its molecule without applying electromagnetic energy to increase Si—O bonds and/or Si—C bonds in the film; and then curing the low-k SiOCH film.
Published as: