The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 15, 2015

Filed:

Dec. 28, 2012
Applicant:

Semiconductor Manufacturing International Corp., Shanghai, CN;

Inventors:

Qiang Wu, Shanghai, CN;

Jing'an Hao, Shanghai, CN;

Chang Liu, Shanghai, CN;

Xin Yao, Shanghai, CN;

Tianhui Li, Shanghai, CN;

Qiang Shu, Shanghai, CN;

Yiming Gu, Shanghai, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03B 27/42 (2006.01); G03B 27/68 (2006.01); G03B 27/54 (2006.01); G03B 27/32 (2006.01); G03F 7/20 (2006.01); G03B 27/58 (2006.01); G03B 27/62 (2006.01);
U.S. Cl.
CPC ...
G03F 7/70358 (2013.01);
Abstract

The present disclosure provides a lithography machine and a scanning and exposing method thereof. According to the scanning and exposing method, the scanning and exposing process for a whole wafer includes two alternately circulated motions: a scanning and exposing motion and a stepping motion; and the scanning and exposing motion is a sinusoidal motion rather than a rapid-acceleration uniform-speed rapid-deceleration scanning and exposing motion in the conventional techniques. During the scanning of a single exposure shot, it may begin to scan the exposure shot once a wafer stage and a reticle stage begin to accelerate from zero speed. And the scanning and exposing may not end until the speeds of the wafer stage and the reticle decrease to zero. Therefore, the effective time of the scanning and exposing in the scanning and exposing motion is greatly increased and the production efficiency of the wafer is improved.


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